Semiconductor device and operating method thereof

半导体器件及其操作方法

Abstract

一种半导体器件的操作方法包括:将读取电压施加至多个存储块之中的选定存储块的选定字线,所述多个存储块包括耦接在位线与源极线之间的单元串;通过在选定存储块的单元串中形成通道来检测源极线的电压;将源极线的电压与对应于选定存储块的参考电压进行比较;以及当作为比较的结果源极线的电压大于参考电压时,对耦接至选定字线的存储单元执行最低有效位(LSB)读取操作,并且当作为比较的结果源极线的电压小于参考电压时,对存储单元执行最高有效位(MSB)读取操作。
The invention discloses a semiconductor device and an operating method thereof. The operating method of a semiconductor device includes applying a read voltage to a selected word line of a selected memory block, among a plurality of memory blocks including cell strings coupled between bit lines and a source line, detecting a voltage of the source line by forming a channel in cell strings of the selected memory block, comparing the voltage of the source line with a reference voltage corresponding to the selected memory block, and performing a least significant bit (LSB) read operation on memory cells coupled to the selected word line when the voltage of the source line is greater than the reference voltage, as a result of the comparing, and performing a most significant bit (MSB) read operation on the memory cells when the voltage of the source line is less than the reference voltage, as the result of the comparing.

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