用于高电压(hv)静电放电(esd)保护的rc堆迭式mosfet电路

RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection

Abstract

本发明涉及用于高电压(HV)静电放电(ESD)保护的RC堆迭式MOSFET电路。所揭示的是在高电压(HV)电路应用中提供抗ESD的保护的形成集成电路(IC)的装置及方法。装置包括经串联堆迭以提供N级堆迭的N个场效晶体管(FET),其中N是大于1旳整数。装置的第一接垫耦接至第一FET,而且第二接垫耦接至第N?FET。装置亦包括经组态以回应于ESD事件而在第一接垫与第二接垫间造成短路的堆迭式/分布式RC控制电路。在ESD事件期间,RC控制电路经组态以并行提供用以控制该N个FET的充分电压,使用寄生传导将该N个FET接通来造成该短路。
The invention relates to a RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection. Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked/distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.

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